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Monolithic arrays of SDDs and low noise CMOS readout for X-ray spectroscopy measurements in nuclear physics experiments

机译:SDD的单片阵列和低噪声CMOS读数,用于核物理实验中的X射线光谱测量

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摘要

This work deals with the development of Silicon Drift Detectors (SDDs) of different sizes and low noise CMOS read-out preamplifiers in view of their use in nuclear physics experiments, like the SIDDHARTA upgrade supported by Italian INFN. In this work we report about the recent SDDs and CMOS preamplifiers development, with particular emphasis on X-ray measurements at cryogenic temperatures. The SDDs presented are designed as single square shaped units of different areas 64 mm(2) (8 mm x 8 mm) or 144 mm(2) (12 mm x 12 mm) and also as monolithic arrays of 9 elements (8 mm x 8 mm each, total area 26 mm x 26 mm) in a 3 x 3 format. The detectors have been designed and manufactured by the Fondazione Bruno Kessler (FBK). The read-out of the SDDs is based on the CMOS preamplifier (CUBE) for both the single unit and the 3 x 3 array. The CMOS technology is intrinsically more robust at lower temperatures with respect to the more conventional JFET transistor used in SDDs readout. A measured resolution of 123 eV on the Mn-K alpha line with the optimum shaping time and a resolution of 126.4 eV with 250 ns shaping time have been obtained with round shaped 10 mm(2) SDDs detectors. This last result leads to excellent spectroscopy performances even with very high input count rates making the SDD+CUBE combination very attractive also for synchrotron applications. The nine detectors array in addition to the preamplifiers the use of a multichannel ASIC for signal shaping and peak detection of all the units and of a custom Data Acquisition System. Also preliminary measurements of low energies lines are reported in order to prove the possibility of soft X-ray detection.
机译:鉴于其在核物理实验中的使用,例如意大利INFN支持的SIDDHARTA升级,这项工作致力于开发不同尺寸的硅漂移检测器(SDD)和低噪声CMOS读出前置放大器。在这项工作中,我们报告了最近的SDD和CMOS前置放大器的发展,尤其着重于低温下的X射线测量。所显示的SDD设计为面积为64 mm(2)(8 mm x 8 mm)或144 mm(2)(12 mm x 12 mm)不同面积的单个正方形单元,还设计为9个元素(8 mm x每个尺寸为8毫米,总面积为26毫米x 26毫米)(3 x 3格式)。探测器由Fondazione Bruno Kessler(FBK)设计和制造。 SDD的读取基于单个单元和3 x 3阵列的CMOS前置放大器(CUBE)。相对于SDD读数中使用的更传统的JFET晶体管,CMOS技术在更低的温度下本质上更加坚固。使用圆形10 mm(2)SDD检测器获得了具有最佳整形时间的Mn-K alpha线上测得的123 eV分辨率和250 ns整形时间的126.4 eV分辨率。最后的结果即使在非常高的输入计数率的情况下也能提供出色的光谱性能,这使得SDD + CUBE组合也非常适合同步加速器应用。除前置放大器外,九个检测器阵列还使用多通道ASIC对所有单元和定制数据采集系统进行信号整形和峰值检测。还报告了低能谱线的初步测量结果,以证明软X射线检测的可能性。

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